| PART |
Description |
Maker |
| MB85344C-70 |
CMOS 2M×32 BIT
Hyper Page Mode DRAM Module(CMOS 2M×32超级页面存取模式动态RAM模块)
|
Fujitsu Limited
|
| MB814400D-60 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB8504E032AA-60 MB8504E032AA-70 |
4 M×32 BITS Hyper Page Mode DRAM Module(CMOS 4 M×32 位超级页面存取模式动态RAM模块) 4米32位超页模式内存的CMOS米32位超级页面存取模式动态内存模块）
4 M?32 BITS Hyper Page Mode DRAM Module(CMOS 4 M?32 浣??绾ч〉?㈠???ā寮????AM妯″?)
|
Fujitsu, Ltd.
Fujitsu Limited
|
| HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V1 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料
|
HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-8TC AS |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 8M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Alliance Semiconductor, Corp.
|
| AS4C1M16E5-50TI AS4C1M16E5-50JI AS4C1M16E5-60TI AS |
5V 1M×16 CMOS DRAM (EDO)
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Alliance Semiconductor Corporation
Integrated Silicon Solution, Inc.
Lattice Semiconductor, Corp.
|
| HY51V17805 HY51V17805BRC-60 HY51V17805BTC-60 HY51V |
2M*8-bit CMOS DRAM with Burst EDO
x8 Burst EDO Page Mode DRAM
|
广州运达电子科技有限公司
|
| KM41C256 |
CMOS DRAM
|
Samsung Electronics
|
| MCM51L4100 |
4M x 1 CMOS DRAM
|
Motorola
|
